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Significant progress in GeSn epitaxial film development

Our team at Lawrence Semiconductor, in collaboration with the University of Arkansas, has made significant progress in GeSn epitaxial film development using a commercial chemical vapor deposition (CVD) reactor. This exciting program in achieving strong direct bandgap luminescence in the mid-wave infrared (MWIR) region opens up new possibilities for applications in infrared detection, imaging, and illumination. Download the article below to learn more about the future of infrared optoelectronics and how GeSn might disrupt the market.

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Who is Lawrence Semiconductor?

Lawrence Semiconductor is a leader in the semiconductor manufacturing industry, known for our specialized capabilities in epitaxial deposition and advanced metrology. Since 1992, Lawrence Semiconductor has supported customer programs from early-stage R&D to high-volume manufacturing across applications such as CMOS, RF, Power, Quantum Computing, Silicon Photonics, Infrared Imaging, and MEMS. Let’s dive into what has made Lawrence Semiconductor a trusted industry partner for over 30 years.

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